AON2403 12v p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -8a r ds(on) (at v gs =-4.5v) < 21m w r ds(on) (at v gs =-2.5v) < 28m w r ds(on) (at v gs =-1.8v) < 40m w r ds(on) (at v gs =-1.5v) < 54m w symbol the AON2403 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -12v g ds dfn 2x2b top view bottom view pin 1 d d g d d s d s pin 1 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state typ max v 8 gate-source voltage c 2.8 junction and storage temperature range -55 to 150 power dissipation a p d w t a =70c 1.8 t a =25c i d a t a =70c continuous drain current g -6 -8 v maximum units parameter drain-source voltage -12 pulsed drain current c -32 a t a =25c c/w maximum junction-to-ambient a d 80 thermal characteristics units maximum junction-to-ambient a c/w r q ja 37 66 45 parameter rev 0 : july 2012 www.aosmd.com page 1 of 5
AON2403 symbol min typ max units bv dss -12 v v ds =-12v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.3 -0.6 -0.9 v i d(on) -32 a 16.5 21 t j =125c 19.3 25 21.5 28 m w 30 40 m w 36 54 m w g fs 33 s v sd -0.6 -1 v i s -3.5 a c iss 1370 pf c oss 350 pf c rss 258 pf r g 10 w q g 12.7 18 nc q gs 1.7 nc q gd 3.4 nc t 11 ns i s =-1a,v gs =0v v gs =-4.5v, v ds =-6v, i d =-8a gate source charge gate drain charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge zero gate voltage drain current gate-body leakage current v ds =-5v, i d =-8a v gs =-1.8v, i d =-4a forward transconductance v gs =-2.5v, i d =-6a v gs =-1.5v, i d =-1a drain-source breakdown voltage i dss reverse transfer capacitance v gs =0v, v ds =-6v, f=1mhz switching parameters m w on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-8a m a v ds =v gs , i d =-250 m a v ds =0v, v gs =8v r ds(on) static drain-source on-resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions t d(on) 11 ns t r 25 ns t d(off) 70 ns t f 41.5 ns t rr 20.7 ns q rr 5.2 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-8a, di/dt=100a/ m s turn-off delaytime turn-on rise time turn-on delaytime v gs =-4.5v, v ds =-6v, r l =0.75 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =-8a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. b. the power dissipation p d is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : july 2012 www.aosmd.com page 2 of 5
AON2403 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 0.9 1 1.1 1.2 1.3 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.8v i d =-4a v gs =-2.5v i d =-6a v gs =-1.5v i d =-1a 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v 0 5 10 15 20 25 30 35 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2v -4.5v -2.5v -3v v gs =-2.5v v gs =-4.5v i d =-8a v gs =-1.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 10 20 30 40 50 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-8a 25 c 125 c rev 0 : july 2012 www.aosmd.com page 3 of 5
AON2403 typical electrical and thermal characteristics 17 52 10 0 18 0 1 2 3 4 5 0 3 6 9 12 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 2400 0 2 4 6 8 10 12 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) c oss c rss v ds =-6v i d =-8a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 40 ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =80 c/w rev 0 : july 2012 www.aosmd.com page 4 of 5
AON2403 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 0 : july 2012 www.aosmd.com page 5 of 5
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